Mitsubishi Electric Corporation (TOKYO: 6503) announced that it will begin shipping samples of its new XB Series high-voltage insulated-gate bipolar transistor (HVIGBT) module, a 3.3k-volt, 1500A high-capacity power semiconductor for large industrial equipment such as railway vehicles, on May 1. By adopting proprietary diode and insulated gate bipolar transistor (IGBT) elements, as well as a unique chip termination structure, the module’s improved moisture resistance will help to improve…
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