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HomeEngineeringA 0.42-nanometer breakthrough could push transistors beyond silicon

A 0.42-nanometer breakthrough could push transistors beyond silicon

Atomically thin semiconductors could enable dramatically smaller and more efficient chips, but a stubborn problem at the boundary between materials has limited their performance. Researchers have now engineered that atomic interface to protect electron flow while still allowing extremely thin insulating layers. The resulting transistors delivered an unusually strong combination of electrical control and performance.
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