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HomeEngineeringEPC Announces New Benchmark for 100 V GaN Power Transistors

EPC Announces New Benchmark for 100 V GaN Power Transistors

EPC launches EPC2367, a 100 V GaN FET with ultra-low 1.2 mΩ RDS(on), superior efficiency, and thermal performance, advancing AI, robotics, and automotive power.

EL SEGUNDO, CA, UNITED STATES, March 18, 2025 /⁨EINPresswire.com⁩/ — Efficient Power …

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